화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 The reactive neutral beam etching of SiC and its application in p-n junction periphery protection.
Sarov G, Cholakova T, Kakanakov R
Materials Science Forum, 483, 769, 2005
2 P-n junction periphery protection of 4H-SiC power p-i-n diodes using epitaxy and dry etching
Sarov G, Cholakova T, Kakanakov R
Materials Science Forum, 457-460, 1005, 2004
3 4H-SiC pn diode grown by LPE method for high power applications
Kuznetsov N, Bauman D, Gavrilin A, Kassamakova L, Kakanakov R, Sarov G, Cholakova T, Zekentes K, Dmitriev V
Materials Science Forum, 433-4, 867, 2002
4 Reliability of 4H-SiC p-n diodes on LPE grown layers
Sarov G, Kakanakov R, Cholakova T, Kassamakova L, Hristeva N, Lepoeva G, Philipova P, Kuznetsov N, Zekentes K
Materials Science Forum, 433-4, 929, 2002