검색결과 : 4건
No. | Article |
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1 |
The reactive neutral beam etching of SiC and its application in p-n junction periphery protection. Sarov G, Cholakova T, Kakanakov R Materials Science Forum, 483, 769, 2005 |
2 |
P-n junction periphery protection of 4H-SiC power p-i-n diodes using epitaxy and dry etching Sarov G, Cholakova T, Kakanakov R Materials Science Forum, 457-460, 1005, 2004 |
3 |
4H-SiC pn diode grown by LPE method for high power applications Kuznetsov N, Bauman D, Gavrilin A, Kassamakova L, Kakanakov R, Sarov G, Cholakova T, Zekentes K, Dmitriev V Materials Science Forum, 433-4, 867, 2002 |
4 |
Reliability of 4H-SiC p-n diodes on LPE grown layers Sarov G, Kakanakov R, Cholakova T, Kassamakova L, Hristeva N, Lepoeva G, Philipova P, Kuznetsov N, Zekentes K Materials Science Forum, 433-4, 929, 2002 |