검색결과 : 10건
No. | Article |
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1 |
P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD Jin YJ, Chia CK, Liu HF, Wong LM, Chai JW, Chi DZ, Wang SJ Applied Surface Science, 376, 236, 2016 |
2 |
Sputter-Deposited La2O3 on p-GaAs for Gate Dielectric Applications Das T, Mahata C, Maiti CK, Dalapati GK, Chia CK, Chi DZ, Chiam SY, Seng HL, Tan CC, Hui HK, Sutradhar G, Bose PK Journal of the Electrochemical Society, 159(2), G15, 2012 |
3 |
High quality Ge epitaxy on GaAs (100) grown by metal-organic chemical vapor deposition Cheng YB, Chia CK, Chai Y, Chi DZ Thin Solid Films, 522, 340, 2012 |
4 |
Surface Passivation of GaAs Substrates with SiO2 Deposited Using ALD Dalapati GK, Chia CK, Mahata C, Das T, Maiti CK, Kumar MK, Gao H, Chiam SY, Tan CC, Chua CT, Cheng YB, Chi DZ Electrochemical and Solid State Letters, 14(10), G52, 2011 |
5 |
Interfacial and Electrical Characterization of Atomic-Layer-Deposited HfO2 Gate Dielectric on High Mobility Epitaxial GaAs/Ge Channel Substrates Dalapati GK, Kumar MK, Chia CK, Gao H, Wang BZ, Wong ASW, Kumar A, Chiam SY, Pan JS, Chi DZ Journal of the Electrochemical Society, 157(8), H825, 2010 |
6 |
Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures Chia CK, Chua SJ, Wang YJ, Yong AM, Chow SY Thin Solid Films, 515(7-8), 3927, 2007 |
7 |
Introduction to the special issue on photonic materials and devices -Preface Chin MK, Chia CK, Pita K, Teng JH, Ooi BS Journal of Crystal Growth, 288(1), 1, 2006 |
8 |
Bandgap engineering in semiconductor quantum dots Chia CK, Dong JR, Chua SJ, Tripathy S Journal of Crystal Growth, 288(1), 57, 2006 |
9 |
Annealing-induced group V intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy Tripathy S, Chia CK, Dong JR, Chua SJ Electrochemical and Solid State Letters, 8(8), G194, 2005 |
10 |
High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer Miao ZL, Chua SJ, Tripathy S, Chia CK, Chye YH, Chen P Journal of Crystal Growth, 268(1-2), 18, 2004 |