화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching
Chen KM, Yeh YH, Wu YH, Chiang CH, Yang DR, Chao CL, Chi TW, Fang YH, Tsay JD, Lee WI
Journal of Crystal Growth, 312(24), 3574, 2010
2 Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
Huang HH, Chao CL, Chi TW, Chang YL, Liu PC, Tu LW, Tsay JD, Kuo HC, Cheng SJ, Lee WI
Journal of Crystal Growth, 311(10), 3029, 2009
3 Triangular extended microtunnels in GaN prepared by selective crystallographic wet chemical etching
Huang HH, Wu PL, Zeng HY, Liu PC, Chi TW, Tsay JD, Leea WI
Journal of the Electrochemical Society, 155(7), H504, 2008
4 Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy
Hsiao CL, Tu LW, Chi TW, Seo HW, Chen QY, Chu WK
Journal of Vacuum Science & Technology B, 24(2), 845, 2006