검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates Goff LE, Powell REL, Kent AJ, Foxon CT, Novikov SV, Webster R, Cherns D Journal of Crystal Growth, 386, 135, 2014 |
| 2 |
The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays Cherns D, Webster RF, Novikov SV, Foxon CT, Fischer AM, Ponce FA Journal of Crystal Growth, 384, 55, 2013 |
| 3 |
A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy Foxon CT, Novikov SV, Hall JL, Campion RP, Cherns D, Griffiths I, Khongphetsak S Journal of Crystal Growth, 311(13), 3423, 2009 |
| 4 |
The structure and properties of dislocations in GaN Cherns D, Hawkridge ME Journal of Materials Science, 41(9), 2685, 2006 |
| 5 |
The oriented growth of ZnO films on NaCl substrates by pulsed laser ablation Henley SJ, Ashfold MNR, Cherns D Thin Solid Films, 422(1-2), 69, 2002 |
| 6 |
Profiling band structure in GaN devices by electron holography Cherns D, Mokhtari H, Jiao CG, Averbeck R, Riechert H Journal of Crystal Growth, 230(3-4), 410, 2001 |
| 7 |
Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells Henley SJ, Bewick A, Cherns D, Ponce FA Journal of Crystal Growth, 230(3-4), 481, 2001 |