검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells Lekhal K, Hussain S, De Mierry P, Vennegues P, Nemoz M, Chauveau JM, Damilano B Journal of Crystal Growth, 434, 25, 2016 |
| 2 |
Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Xia Y, Brault J, Vennegues P, Nemoz M, Teisseire M, Leroux M, Chauveau JM Journal of Crystal Growth, 388, 35, 2014 |
| 3 |
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes Kim-Chauveau H, Frayssinet E, Damilano B, De Mierry P, Bodiou L, Nguyen L, Vennegues P, Chauveau JM, Cordier Y, Duboz JY, Charash R, Vajpeyi A, Lamy JM, Akhter M, Maaskant PP, Corbett B, Hangleiter A, Wieck A Journal of Crystal Growth, 338(1), 20, 2012 |
| 4 |
The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates Kim-Chauveau H, de Mierry P, Chauveau JM, Duboz JY Journal of Crystal Growth, 316(1), 30, 2011 |
| 5 |
Growth of GaN based structures on Si(110) by molecular beam epitaxy Cordier Y, Moreno JC, Baron N, Frayssinet E, Chauveau JM, Nemoz M, Chenot S, Damilano B, Semond F Journal of Crystal Growth, 312(19), 2683, 2010 |
| 6 |
Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy Chauveau JM, Buell DA, Laugt M, Vennegues P, Teisseire-Doninelli M, Berard-Bergery S, Deparis C, Lo B, Vinter B, Morhain C Journal of Crystal Growth, 301, 366, 2007 |
| 7 |
Nitrogen-dependent optimum annealing temperature of Ga(As,N) Mussler G, Chauveau JM, Trampert A, Ramsteiner M, Daweritz L, Ploog KH Journal of Crystal Growth, 267(1-2), 60, 2004 |
| 8 |
Correlation between interface structure and light emission at 1.3-1.55 mu m of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates Trampert A, Chauveau JM, Ploog KH, Tournie E, Guzman A Journal of Vacuum Science & Technology B, 22(4), 2195, 2004 |
| 9 |
Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers Chauveau JM, Cordier Y, Kim HJ, Ferre D, Androussi Y, Di Persio J Journal of Crystal Growth, 251(1-4), 112, 2003 |
| 10 |
Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE Chauveau JM, Trampert A, Pinault MA, Tournie E, Du K, Ploog KH Journal of Crystal Growth, 251(1-4), 383, 2003 |