검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes Kim-Chauveau H, Frayssinet E, Damilano B, De Mierry P, Bodiou L, Nguyen L, Vennegues P, Chauveau JM, Cordier Y, Duboz JY, Charash R, Vajpeyi A, Lamy JM, Akhter M, Maaskant PP, Corbett B, Hangleiter A, Wieck A Journal of Crystal Growth, 338(1), 20, 2012 |
| 2 |
Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters Vennegues P, Diaby BS, Kim-Chauveau H, Bodiou L, Schenk HPD, Frayssinet E, Martin RW, Watson IM Journal of Crystal Growth, 353(1), 108, 2012 |
| 3 |
The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates Kim-Chauveau H, de Mierry P, Chauveau JM, Duboz JY Journal of Crystal Growth, 316(1), 30, 2011 |
| 4 |
Influence of nutrient, pH and dissolved oxygen on the production of Metarhizium flavoviride Mf189 blastospores in submerged batch culture Issaly N, Chauveau H, Aglevor F, Fargues J, Durand A Process Biochemistry, 40(3-4), 1425, 2005 |