검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour Jain P, Yadav C, Agarwal A, Chauhan YS Solid-State Electronics, 134, 74, 2017 |
| 2 |
Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs Agarwal H, Kushwaha P, Gupta C, Khandelwal S, Hu CM, Chauhan YS Solid-State Electronics, 115, 33, 2016 |
| 3 |
Modeling the impact of substrate depletion in FDSOI MOSFETs Kushwaha P, Paydavosi N, Khandelwal S, Yadav C, Agarwal H, Duarte JP, Hu CM, Chauhan YS Solid-State Electronics, 104, 6, 2015 |
| 4 |
Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters Tsamados D, Chauhan YS, Eggimann C, Akarvardar K, Wong HSP, Ionescu AM Solid-State Electronics, 52(9), 1374, 2008 |
| 5 |
An EKV-based high voltage MOSFET model with improved mobility and drift model Chauhan YS, Gillon R, Bakeroot B, Krummenacher F, Declercq M, Ionescu AM Solid-State Electronics, 51(11-12), 1581, 2007 |
| 6 |
Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, Desoete B, Frere S, Desormeaux AB, Sharma A, Declercq M, Ionescu AM Solid-State Electronics, 50(11-12), 1801, 2006 |