검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Hall measurements of inversion and accumulation-mode 4H-SiC MOSFETs Chatty K, Banerjee S, Chow TP, Gutmann RJ, Arnold E, Alok D Materials Science Forum, 389-3, 1041, 2002 |
| 2 |
Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs Chatty K, Banerjee S, Chow TP, Gutmann RJ Materials Science Forum, 389-3, 1089, 2002 |
| 3 |
Design and implementation of RESURF MOSFETs in 4H-SiC Banerjee S, Chatty K, Chow TP, Gutmann RJ Materials Science Forum, 353-356, 715, 2001 |
| 4 |
Breakdown voltage improvement of 4H-SiC Schottky diodes by a thin surface implant Khemka V, Chatty K, Chow TP, Gutmann RJ Materials Science Forum, 338-3, 1211, 2000 |
| 5 |
Nitrogen vs. phosphorus as implant species for high-voltage lateral RESURF MOSFETs on 4H-SiC Chatty K, Banerjee S, Chow TP, Gutmann RJ Materials Science Forum, 338-3, 1279, 2000 |
| 6 |
Comparison of nitrogen and phosphorus implanted, planar, high-voltage 4H-SiC junction rectifiers Chatty K, Khemka V, Chow TP, Gutmann RJ Materials Science Forum, 338-3, 1331, 2000 |