검색결과 : 6건
No. | Article |
---|---|
1 |
High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits Liang D, Bowers JE, Oakley DC, Napoleone A, Chapman DC, Chen CL, Juodawlkis PW, Raday O Electrochemical and Solid State Letters, 12(4), H101, 2009 |
2 |
Organometallic vapor phase epitaxy of relaxed InPAs/InP as multiplication layers for avalanche photodiodes Wang CA, Duerr EK, Donnelly JP, Calawa DR, Chapman DC Journal of Crystal Growth, 310(7-9), 1583, 2008 |
3 |
Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodes Chapman DC, Vineis CJ, Oakley DC, Napoleone A, Smith GM, Duerr EK, Jensen KE, Donnelly JP, McIntosh KA, Verghese S Journal of Crystal Growth, 310(7-9), 2365, 2008 |
4 |
Zn enhancement during surfactant-mediated growth of GaInP and GaP Chapman DC, Howard AD, Stringfellow GB Journal of Crystal Growth, 287(2), 647, 2006 |
5 |
A suite of parallel vectors for baculovirus expression Pengelley SC, Chapman DC, Abbott WM, Lin HH, Huang W, Dalton K, Jones IM Protein Expression and Purification, 48(2), 173, 2006 |
6 |
Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth Lee RT, Fetzer CM, Jun SW, Chapman DC, Shurtleff JK, Stringfellow GB, Ok YW, Seong TY Journal of Crystal Growth, 233(3), 490, 2001 |