화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits
Liang D, Bowers JE, Oakley DC, Napoleone A, Chapman DC, Chen CL, Juodawlkis PW, Raday O
Electrochemical and Solid State Letters, 12(4), H101, 2009
2 Organometallic vapor phase epitaxy of relaxed InPAs/InP as multiplication layers for avalanche photodiodes
Wang CA, Duerr EK, Donnelly JP, Calawa DR, Chapman DC
Journal of Crystal Growth, 310(7-9), 1583, 2008
3 Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodes
Chapman DC, Vineis CJ, Oakley DC, Napoleone A, Smith GM, Duerr EK, Jensen KE, Donnelly JP, McIntosh KA, Verghese S
Journal of Crystal Growth, 310(7-9), 2365, 2008
4 Zn enhancement during surfactant-mediated growth of GaInP and GaP
Chapman DC, Howard AD, Stringfellow GB
Journal of Crystal Growth, 287(2), 647, 2006
5 A suite of parallel vectors for baculovirus expression
Pengelley SC, Chapman DC, Abbott WM, Lin HH, Huang W, Dalton K, Jones IM
Protein Expression and Purification, 48(2), 173, 2006
6 Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth
Lee RT, Fetzer CM, Jun SW, Chapman DC, Shurtleff JK, Stringfellow GB, Ok YW, Seong TY
Journal of Crystal Growth, 233(3), 490, 2001