검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
Edge termination strategies for a 4 kV 4H-SiC thyristor Brosselard P, Planson D, Scharnholz S, Raynaud C, Zorngiebel V, Lazar M, Chante JP, Spahn E Solid-State Electronics, 50(7-8), 1183, 2006 |
| 2 |
P-type SiC layers formed by VLS induced selective epitaxial growth Lazar M, Jacquier C, Dubois C, Raynaud C, Ferro G, Planson D, Brosselard P, Monteil Y, Chante JP Materials Science Forum, 483, 633, 2005 |
| 3 |
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E Materials Science Forum, 483, 1005, 2005 |
| 4 |
SiC-based current limiter devices Chante JP, Tournier D, Planson D, Raynaud C, Lazar M, Locatelli ML, Brosselard P Materials Science Forum, 457-460, 951, 2004 |
| 5 |
On-chip temperature monitoring of a SiC current limiter Tournier D, Godignon P, Millan J, Planson D, Chante JP, Sarrus F, de Palma JF Materials Science Forum, 457-460, 1021, 2004 |
| 6 |
The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study Lazar M, Cardinali G, Raynaud C, Poggi A, Planson D, Nipoti R, Chante JP Materials Science Forum, 457-460, 1025, 2004 |
| 7 |
Design, fabrication and characterization of 5 kV 4H-SiC p(+)n planar bipolar diodes protected by junction termination extension Raynaud C, Lazar M, Planson D, Chante JP, Sassi Z Materials Science Forum, 457-460, 1033, 2004 |
| 8 |
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Brosselard P, Zorngiebel V, Planson D, Scharnholz S, Chante JP, Spahn E, Raynaud C, Lazar M Materials Science Forum, 457-460, 1129, 2004 |
| 9 |
Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML Materials Science Forum, 457-460, 1133, 2004 |
| 10 |
A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects Lazar M, Raynaud C, Planson D, Locatelli ML, Isoird K, Ottaviani L, Chante JP, Nipoti R, Poggi A, Cardinali G Materials Science Forum, 389-3, 827, 2002 |