| 1 |
Electrical characterization of vertically stacked p-FET SOI nanowires
Paz BC, Casse M, Barraud S, Reimbold G, Vinet M, Faynot O, Pavanello MA
Solid-State Electronics, 141, 84, 2018 |
| 2 |
Heat transfer investigation in rotating smooth square U-duct with different wall-temperature ratios and channel orientations
Li Y, Deng HW, Xu GQ, Tian SQ
International Journal of Heat and Mass Transfer, 89, 10, 2015 |
| 3 |
Effect of silicon channel orientation on analog performance of (110) surface pMOSFETs
Kang TK
Solid-State Electronics, 69, 104, 2012 |
| 4 |
Hole transport in DGSOI devices: Orientation and silicon thickness effects
Donetti L, Gamiz F, Rodriguez N, Jimenez-Molinos F, Roldan JB
Solid-State Electronics, 54(2), 191, 2010 |
| 5 |
Effects of switching from < 1 1 0 > to < 1 0 0 > channel orientation and tensile stress on n-channel and p-channel metal-oxide-semiconductor transistors
Yang PZ, Lau WS, Lai SW, Lo VL, Siah SY, Chan L
Solid-State Electronics, 54(4), 461, 2010 |
| 6 |
Modeling and validation of piezoresistive coefficients in Si hole inversion layers
Pham AT, Jungemann C, Meinerzhagen B
Solid-State Electronics, 53(12), 1325, 2009 |
| 7 |
Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates
Pham AT, Jungemann C, Meinerzhagen B
Solid-State Electronics, 52(9), 1437, 2008 |
| 8 |
Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs
Rafhay Q, Clerc R, Ghibaudo G, Pananakakis G
Solid-State Electronics, 52(10), 1474, 2008 |
| 9 |
High rotation number heat transfer of a 45 degrees rib-roughened rectangular duct with two channel orientations
Liou TM, Chang SW, Hung JH, Chiou SF
International Journal of Heat and Mass Transfer, 50(19-20), 4063, 2007 |
| 10 |
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
von Haartman M, Malm BG, Hellstrom PE, Ostling M, Grasby TJ, Whall TE, Parker EHC, Lyutovich K, Oehme M, Kasper E
Solid-State Electronics, 51(5), 771, 2007 |
