검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor Chowdhury I, Chandrasekhar MVS, Klein PB, Caldwell JD, Sudarshan T Journal of Crystal Growth, 316(1), 60, 2011 |
| No. | Article |
|---|---|
| 1 |
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor Chowdhury I, Chandrasekhar MVS, Klein PB, Caldwell JD, Sudarshan T Journal of Crystal Growth, 316(1), 60, 2011 |