| 1 |
Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks
Mallem K, Chandra SVJ, Ju M, Dutta S, Phanchanan S, Sanyal S, Pham DP, Hussain SQ, Kim Y, Park J, Cho YH, Cho EC, Yi J
Thin Solid Films, 675, 16, 2019 |
| 2 |
Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices
Chandra SVJ, Fortunato E, Martins R, Choi CJ
Thin Solid Films, 520(14), 4556, 2012 |
| 3 |
Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO2 thin films by DC magnetron sputtering
Sekhar MC, Kondaiah P, Chandra SVJ, Rao GM, Uthanna S
Applied Surface Science, 258(5), 1789, 2011 |
| 4 |
Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device
Chandra SVJ, Jeong MR, Shim KH, Hong HB, Lee SH, Ahn KS, Choi CJ
Journal of the Electrochemical Society, 157(5), H546, 2010 |
| 5 |
Effect of substrate temperature on the structural, optical and electrical properties of dc magnetron sputtered tantalum oxide films
Chandra SVJ, Uthanna S, Rao GM
Applied Surface Science, 254(7), 1953, 2008 |
