| 1 |
Circular electrodes to reduce the current variation of OTFTs with the drop-casted semiconducting layer
Kabir HMD, Ahmed Z, Kariyadan R, Zhang LN, Chan MS
Solid-State Electronics, 144, 49, 2018 |
| 2 |
Carrier Type Control of WSe2 Field-Effect Transistors by Thickness Modulation and MoO3 Layer Doping
Zhou CJ, Zhao YD, Raju S, Wang Y, Lin ZY, Chan MS, Chai Y
Advanced Functional Materials, 26(23), 4223, 2016 |
| 3 |
Extraction and modeling of layout-dependent MOSFET gate-to-source/drain fringing capacitance in 40 nm technology
Sun LJ, Shang GB, Liu LL, Cheng J, Guo A, Ren Z, Hu SJ, Chen SM, Zhao YH, Chan MS, Zhang L, Li XJ, Shi YL
Solid-State Electronics, 111, 118, 2015 |
| 4 |
Highly Aligned Graphene/Polymer Nanocomposites with Excellent Dielectric Properties for High-Performance Electromagnetic Interference Shielding
Yousefi N, Sun XY, Lin XY, Shen X, Jia JJ, Zhang B, Tang BZ, Chan MS, Kim JK
Advanced Materials, 26(31), 5480, 2014 |
| 5 |
Surface acoustic wave resonators based on (002) AlN/Pt/diamond/silicon layered structure
Zhou CJ, Yang Y, Jin H, Feng B, Dong SR, Luo JK, Ren TL, Chan MS, Yang CY
Thin Solid Films, 548, 425, 2013 |
| 6 |
A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
Wang YL, Yan ZF, Zhu JX, Zhang LN, Lin XN, He J, Cao JC, Chan MS
Solid-State Electronics, 54(8), 791, 2010 |
| 7 |
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET
Zhang LN, Ma CY, He J, Lin XN, Chan MS
Solid-State Electronics, 54(8), 806, 2010 |
| 8 |
A charge-based compact model for predicting the current-voltage and capacitance-voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs
Liu FL, Zhang J, He F, Liu F, Zhang LN, Chan MS
Solid-State Electronics, 53(1), 49, 2009 |
| 9 |
An explicit surface-potential-based model for undoped double-gate MOSFETs
Gong JF, Chan PCH, Chan MS
Solid-State Electronics, 52(2), 282, 2008 |
| 10 |
An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration (vol 51, pg 179, 2007)
He J, Bian W, Tao YD, Liu F, Lu KL, Wu W, Wang T, Chan MS
Solid-State Electronics, 51(5), 816, 2007 |
