검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire Roberts JW, Jarman JC, Johnstone DN, Midgley PA, Chalker PR, Oliver RA, Massabuau FCP Journal of Crystal Growth, 487, 23, 2018 |
| 2 |
The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver Golrokhi Z, Marshall PA, Romani S, Rushworth S, Chalker PR, Potter RJ Applied Surface Science, 399, 123, 2017 |
| 3 |
Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes Willcocks AM, Pugh T, Cosham SD, Hamilton J, Sung SL, Heil T, Chalker PR, Williams PA, Kociok-Kohn G, Johnson AL Inorganic Chemistry, 54(10), 4869, 2015 |
| 4 |
Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO2 Aspinall HC, Bacsa J, Jones AC, Wrench JS, Black K, Chalker PR, King PJ, Marshall P, Werner M, Davies HO, Odedra R Inorganic Chemistry, 50(22), 11644, 2011 |
| 5 |
Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct Kanjolia R, Jones AC, Ashraf S, Bacsa J, Black K, Chalker PR, Beahan P, Hindley S, Odedra R, Williams PA, Heys PN Journal of Crystal Growth, 315(1), 292, 2011 |
| 6 |
Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires Lari L, Walther T, Gass MH, Geelhaar L, Cheze C, Riechert H, Bullough TJ, Chalker PR Journal of Crystal Growth, 327(1), 27, 2011 |
| 7 |
Effect of deposition temperature on the properties of CeO2 films grown by atomic layer deposition King PJ, Werner M, Chalker PR, Jones AC, Aspinall HC, Basca J, Wrench JS, Black K, Davies HO, Heys PN Thin Solid Films, 519(13), 4192, 2011 |
| 8 |
MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (vol 310, pg 1010, 2008) Black K, Jones AC, Chalker PR, Gaskell JM, MurreyB RT, Joyce TB, Rushworth SA Journal of Crystal Growth, 311(23-24), 4812, 2009 |
| 9 |
Gd silicate: A high-k dielectric compatible with high temperature annealing Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engstrom O, Newcomb SB Journal of Vacuum Science & Technology B, 27(1), 249, 2009 |
| 10 |
Frequency dispersion and dielectric relaxation of La2Hf2O7 Zhao CZ, Taylor S, Werner M, Chalker PR, Gaskell JM, Jones AC Journal of Vacuum Science & Technology B, 27(1), 333, 2009 |