검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Understanding the growth of p-doped 4H-SiC layers using vapour-liquid-solid transport Vo-Ha A, Carole D, Lazar M, Tournier D, Cauwet F, Souliere V, Thierry-Jebali N, Brosselard P, Planson D, Brylinski C, Ferro G Thin Solid Films, 548, 125, 2013 |
| 2 |
Deposition of nanocrystalline translucent h-BN films by chemical vapor deposition at high temperature Younes G, Ferro G, Soueidan M, Brioude A, Souliere V, Cauwet F Thin Solid Films, 520(7), 2424, 2012 |
| 3 |
Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst Carole D, Brioude A, Pillonnet A, Lorenzzi J, Kim-Hak O, Cauwet F, Ferro G Journal of Crystal Growth, 320(1), 55, 2011 |
| 4 |
Growing 3C-SiC heteroepitaxial layers on alpha-SiC substrate by vapour-liquid-solid mechanism from the Al-Ge-Si ternary system Lorenzzi J, Ferro G, Cauwet F, Souliere V, Carole D Journal of Crystal Growth, 318(1), 397, 2011 |
| 5 |
Incorporation of group III, IV and V elements in 3C-SiC(111) layers grown by the vapour-liquid-solid mechanism Lorenzzi J, Zoulis G, Marinova M, Kim-Hak O, Sun JW, Jegenyes N, Peyre H, Cauwet F, Chaudouet P, Soueidan M, Carole D, Camassel J, Polychroniadis EK, Ferro G Journal of Crystal Growth, 312(23), 3443, 2010 |
| 6 |
Low-temperature homoepitaxial growth of alpha-SiC on on-axis (0001) substrate by vapor-liquid-solid mechanism Soueidan M, Ferro G, Nsouli B, Cauwet F, Mollet L, Jacquier C, Younes G, Monteil Y Journal of Crystal Growth, 293(2), 433, 2006 |
| 7 |
Comparison of different metal additives to Si for the homoepitaxial growth of 4H-SiC layers by Vapour-Liquid-Solid mechanism Abdou F, Jacquier C, Ferro G, Cauwet F, Monteil Y Materials Science Forum, 457-460, 245, 2004 |
| 8 |
Growth and characterisation of heavily Al-doped 4H-SiC layers grown by VLS in an Al-Si melt Jacquier C, Ferro G, Balloud C, Zielinski M, Camassel J, Polychroniadis E, Stoemenos J, Cauwet F, Monteil Y Materials Science Forum, 457-460, 735, 2004 |
| 9 |
On the growth of 4H-SiC by low-temperature liquid phase epitaxy in Al rich Al-Si melts Jacquier C, Ferro G, Cauwet F, Viala JC, Younes G, Monteil Y Journal of Crystal Growth, 254(1-2), 123, 2003 |
| 10 |
Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide Jacquier C, Chaussende D, Ferro G, Viala JC, Cauwet F, Monteil Y Journal of Materials Science, 37(15), 3299, 2002 |