화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology
Morin P, Maitrejean S, Allibert F, Augendre E, Liu Q, Loubet N, Grenouillet L, Pofelski A, Chen KG, Khakifirooz A, Wacquez R, Reboh S, Bonnevialle A, le Royer C, Morand Y, Kanyandekwe J, Chanemougamme D, Mignot Y, Escarabajal Y, Lherron B, Chafik F, Pilorget S, Caubet P, Vinet M, Clement L, Desalvo B, Doris B, Kleemeier W
Solid-State Electronics, 117, 100, 2016
2 Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
Piallat F, Beugin V, Gassilloud R, Dussault L, Pelissier B, Leroux C, Caubet P, Vallee C
Applied Surface Science, 303, 388, 2014
3 Investigating doping effects on high-kappa metal gate stack for effective work function engineering
Leroux C, Baudot S, Charbonnier M, Van Der Geest A, Caubet P, Toffoli A, Blaise P, Ghibaudo G, Martin F, Reimbold G
Solid-State Electronics, 88, 21, 2013
4 Revealing Atom-Radical Reactivity at Low Temperature Through the N plus OH Reaction
Daranlot J, Jorfi M, Xie CJ, Bergeat A, Costes M, Caubet P, Xie DQ, Guo H, Honvault P, Hickson KM
Science, 334(6062), 1538, 2011
5 Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient
Caubet P, Blomberg T, Benaboud R, Wyon C, Blanquet E, Gonchond JP, Juhel M, Bouvet P, Gros-Jean M, Michailos J, Richard C, Iteprat B
Journal of the Electrochemical Society, 155(8), H625, 2008
6 CN(A(2)Pi(i) -> X-2 Sigma(+)) chemiluminescence from the N+C2N, N+CCl, and N+C-2 reactions under low-pressure fast-flow conditions
Daugey N, Bergeat A, Loison JC, Schuck A, Caubet P, Dorthe G
Chemical Physics Letters, 324(1-3), 1, 2000