화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
Merrett JN, Williams JR, Cressler JD, Sutton A, Cheng L, Bondarenko V, Sankin I, Seale D, Mazzola MS, Krishnan B, Koshka Y, Casady JB
Materials Science Forum, 483, 885, 2005
2 Effect of high-dose aluminium implantation on 4H-SiC oxidation
Cheng L, Casady JRB, Mazzola J, Casady JB, Koshka Y, Bondarenko V
Materials Science Forum, 457-460, 885, 2004
3 Investigation of two-stage activation annealing of Al-implanted 4H-SiC layers
Merrett JN, Scofield JD, Tsao BH, Mazzola M, Seale D, Draper WA, Sankin I, Casady JB, Bondarenko V
Materials Science Forum, 457-460, 921, 2004
4 Design and implementation of the optimized edge termination in 1.8 W4H-SiC PiN diodes
Sankin I, Draper WA, Merrett JN, Casady JRB, Casady JB
Materials Science Forum, 457-460, 1101, 2004
5 Assessment of "normally on" and "quasi on" SiCVJFET's in half-bridge circuits
Mazzola MS, Casady JB, Merrett N, Sankin I, Draper W, Seale D, Bondarenko V, Koshka Y, Gafford J, Kelley R
Materials Science Forum, 457-460, 1153, 2004
6 Influence of buffer layer on DC and RF performance of 4H SiC MESFET
Los AV, Mazzola MS, Kajfez D, McDaniel BT, Smith CE, Kretchmer J, Rowland LB, Casady JB
Materials Science Forum, 457-460, 1193, 2004
7 A review of SiC power switch: achievements, difficulties and perspectives
Sankin I, Merrett JN, Draper WA, Casady JRB, Casady JB
Materials Science Forum, 457-460, 1249, 2004
8 Fabrication and simulation of 4H-SiC PiN diodes having mesa guard ring edge termination
Sankin I, Dufrene JB, Merrett JN, Casady JB
Materials Science Forum, 433-4, 879, 2002
9 A review of SiC static induction transistor development for high-frequency power amplifiers
Sung YM, Casady JB, Dufrene JB, Agarwal AK
Solid-State Electronics, 46(5), 605, 2002
10 On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal
Sankin I, Casady JB, Dufrene JB, Draper WA, Kretchmer J, Vandersand J, Kumar V, Mazzola MS, Saddow SE
Solid-State Electronics, 45(9), 1653, 2001