검색결과 : 16건
No. | Article |
---|---|
1 |
Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs Merrett JN, Williams JR, Cressler JD, Sutton A, Cheng L, Bondarenko V, Sankin I, Seale D, Mazzola MS, Krishnan B, Koshka Y, Casady JB Materials Science Forum, 483, 885, 2005 |
2 |
Effect of high-dose aluminium implantation on 4H-SiC oxidation Cheng L, Casady JRB, Mazzola J, Casady JB, Koshka Y, Bondarenko V Materials Science Forum, 457-460, 885, 2004 |
3 |
Investigation of two-stage activation annealing of Al-implanted 4H-SiC layers Merrett JN, Scofield JD, Tsao BH, Mazzola M, Seale D, Draper WA, Sankin I, Casady JB, Bondarenko V Materials Science Forum, 457-460, 921, 2004 |
4 |
Design and implementation of the optimized edge termination in 1.8 W4H-SiC PiN diodes Sankin I, Draper WA, Merrett JN, Casady JRB, Casady JB Materials Science Forum, 457-460, 1101, 2004 |
5 |
Assessment of "normally on" and "quasi on" SiCVJFET's in half-bridge circuits Mazzola MS, Casady JB, Merrett N, Sankin I, Draper W, Seale D, Bondarenko V, Koshka Y, Gafford J, Kelley R Materials Science Forum, 457-460, 1153, 2004 |
6 |
Influence of buffer layer on DC and RF performance of 4H SiC MESFET Los AV, Mazzola MS, Kajfez D, McDaniel BT, Smith CE, Kretchmer J, Rowland LB, Casady JB Materials Science Forum, 457-460, 1193, 2004 |
7 |
A review of SiC power switch: achievements, difficulties and perspectives Sankin I, Merrett JN, Draper WA, Casady JRB, Casady JB Materials Science Forum, 457-460, 1249, 2004 |
8 |
Fabrication and simulation of 4H-SiC PiN diodes having mesa guard ring edge termination Sankin I, Dufrene JB, Merrett JN, Casady JB Materials Science Forum, 433-4, 879, 2002 |
9 |
A review of SiC static induction transistor development for high-frequency power amplifiers Sung YM, Casady JB, Dufrene JB, Agarwal AK Solid-State Electronics, 46(5), 605, 2002 |
10 |
On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal Sankin I, Casady JB, Dufrene JB, Draper WA, Kretchmer J, Vandersand J, Kumar V, Mazzola MS, Saddow SE Solid-State Electronics, 45(9), 1653, 2001 |