검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
High growth rate (up to 20 mu m/h) SiC epitaxy in a horizontal hot-wall reactor Zhang J, Mazzola J, Hoff C, Koshka Y, Casady J Materials Science Forum, 483, 77, 2005 |
| 2 |
4H-SiC p-n diodes and gate turnoff thyristors for high-power, high-temperature applications Agarwal AK, Seshadri S, MacMillan M, Mani SS, Casady J, Sanger P, Shah P Solid-State Electronics, 44(2), 303, 2000 |