검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Genomic and epidemiological monitoring of yellow fever virus transmission potential Faria NR, Kraemer MUG, Hill SC, de Jesus JG, Aguiar RS, Iani FCM, Xavier J, Quick J, du Plessis L, Dellicour S, Theze J, Carvalho RDO, Baele G, Wu CH, Silveira PP, Arruda MB, Pereira MA, Pereira GC, Lourenco J, Obolski U, Abade L, Vasylyeva TI, Giovanetti M, Yi D, Weiss DJ, Wint GRW, Shearer FM, Funk S, Nikolay B, Fonseca V, Adelino TER, Oliveira MAA, Silva MVF, Sacchetto L, Figueiredo PO, Rezende IM, Mello EM, Said RFC, Santos DA, Ferraz ML, Brito MG, Santana LF, Menezes MT, Brindeiro RM, Tanuri A, dos Santos FCP, Cunha MS, Nogueira JS, Rocco IM, da Costa AC, Komninakis SCV, Azevedo V, Chieppe AO, Araujo ESM, Mendonca MCL, dos Santos CC, dos Santos CD, Mares-Guia AM, Nogueira RMR, Sequeira PC, Abreu RG, Garcia MHO, Abreu AL, Okumoto O, Kroon EG, de Albuquerque CFC, Lewandowski K, Pullan ST, Carroll M, de Oliveira T, Sabino EC, Souza RP, Suchard MA, Lemey P, Trindade GS, Drumond BP, Filippis AMB, Loman NJ, Cauchemez S, Alcantara LCJ, Pybus OG Science, 361(6405), 894, 2018 |
| 2 |
SELECTED PAPERS FROM THE 6TH INTERNATIONAL SIGE TECHNOLOGY AND DEVICE MEETING (ISTDM 2012) Liu TJK, Koester SJ, Hartmann JM, Loo R, Yeo YC, Carroll M Solid-State Electronics, 83, 1, 2013 |
| 3 |
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth Park JS, Curtin M, Hydrick JM, Bai J, Li JT, Cheng Z, Carroll M, Fiorenza JG, Lochtefeld A Electrochemical and Solid State Letters, 12(4), H142, 2009 |
| 4 |
Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping Li JZ, Bai J, Hydrick JM, Park JS, Major C, Carroll M, Fiorenza JG, Lochtefeld A Journal of Crystal Growth, 311(11), 3133, 2009 |
| 5 |
Fabrication of Low-Defectivity, Compressively Strained Ge on Si0.2Ge0.8 Structures Using Aspect Ratio Trapping Park JS, Curtin M, Hydrick JM, Bai J, Carroll M, Fiorenza JG, Lochtefeld A Journal of the Electrochemical Society, 156(4), H249, 2009 |
| 6 |
Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping Li JZ, Hydrick JM, Park JS, Li J, Bai J, Cheng ZY, Carroll M, Fiorenza JG, Lochtefeld A, Chan W, Shellenbarger Z Journal of the Electrochemical Society, 156(7), H574, 2009 |
| 7 |
Facet formation and lateral overgrowth of selective Ge epitaxy on SiO2-patterned Si(001) substrates Park JS, Bai J, Curtin M, Carroll M, Lochtefeld A Journal of Vacuum Science & Technology B, 26(1), 117, 2008 |
| 8 |
Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping Park JS, Curtin M, Hydrick JM, Carroll M, Fiorenza JG, Lochtefeld A, Novak S Journal of Vacuum Science & Technology B, 26(5), 1740, 2008 |
| 9 |
Reduced-pressure chemical vapor deposition of epitaxial ge films on si(001) substrates using GeCl4 Park JS, Curtin M, Major C, Bengtson S, Carroll M, Lochtefeld A Electrochemical and Solid State Letters, 10(11), H313, 2007 |
| 10 |
Direct regrowth of thin strained silicon films on planarized relaxed silicon-germanium virtual substrates Leitz CW, Vineis CJ, Carlin J, Fiorenza J, Braithwaite G, Westhoff R, Yang V, Carroll M, Langdo TA, Matthews K, Kohli P, Rodder M, Wise R, Lochtefeld A Thin Solid Films, 513(1-2), 300, 2006 |