검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors - Physical interpretation of transport phenomena Nafaa B, Cretu B, Ismail N, Touayar O, Carin R, Simoen E, Veloso A Solid-State Electronics, 150, 1, 2018 |
| 2 |
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A Solid-State Electronics, 128, 102, 2017 |
| 3 |
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A Solid-State Electronics, 128, 109, 2017 |
| 4 |
Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy Achour H, Cretu B, Simoen E, Routoure JM, Carin R, Benfdila A, Aoulaiche M, Claeys C Solid-State Electronics, 112, 1, 2015 |
| 5 |
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics dos Santos SD, Cretu B, Strobel V, Routoure JM, Carin R, Martino JA, Aoulaiche M, Jurczak M, Simoen E, Claeys C Solid-State Electronics, 97, 14, 2014 |
| 6 |
In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature Achour H, Cretu B, Routoure JM, Carin R, Talmat R, Benfdila A, Simoen E, Claeys C Solid-State Electronics, 98, 12, 2014 |
| 7 |
DC and low frequency noise performances of SOI p-FinFETs at very low temperature Achour H, Talmat R, Cretu B, Routoure JM, Benfdila A, Carin R, Collaert N, Simoen E, Mercha A, Claey C Solid-State Electronics, 90, 160, 2013 |
| 8 |
Low frequency noise characterization in n-channel FinFETs Talmat R, Achour H, Cretu B, Routoure JM, Benfdila A, Carin R, Collaert N, Mercha A, Simoen E, Claeys C Solid-State Electronics, 70, 20, 2012 |
| 9 |
Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs Guo W, Cretu B, Routoure JM, Carin R, Simoen E, Mercha A, Collaert N, Put S, Claeys C Solid-State Electronics, 52(12), 1889, 2008 |
| 10 |
Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs Guo W, Cretu B, Routoure JM, Carin R, Simoen E, Claeys C Solid-State Electronics, 51(9), 1180, 2007 |