화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers
Chen WZ, Lee KY, Capano MA
Journal of Crystal Growth, 297(2), 265, 2006
2 Energy band alignment and interface states in AlGaN/4H-SiC vertical heterojunction diodes
Johnson BJ, Capano MA, Mastro MA
Solid-State Electronics, 50(7-8), 1413, 2006
3 The effect of titanium on Al-Ti contacts to p-type 4H-SiC
Johnson BJ, Capano MA
Solid-State Electronics, 47(9), 1437, 2003
4 High-performance UMOSFETs in 4H-SiC
Li Y, Cooper JA, Capano MA
Materials Science Forum, 389-3, 1191, 2002
5 Formation of low resistivity ohmic contacts to n-type 3C-SiC
Wan JW, Capano MA, Melloch MR
Solid-State Electronics, 46(8), 1227, 2002
6 Effect of surface preparation on Ni Ohmic contact to 3C-SiC
Noh JI, Nahm KS, Kim KC, Capano MA
Solid-State Electronics, 46(12), 2273, 2002
7 A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures
Capano MA
Applied Surface Science, 184(1-4), 317, 2001
8 Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide
Capano MA, Cooper JA, Melloch MR, Saxler A, Mitchel WC
Materials Science Forum, 338-3, 703, 2000
9 High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching
Saddow SE, Williams J, Isaacs-Smith T, Capano MA, Cooper JA, Mazzola MS, Hsieh AJ, Casady JB
Materials Science Forum, 338-3, 901, 2000
10 Design of a Ti/TiC/DLC Functionally Gradient Coating Based on Studies of Structural Transitions in Ti-C Thin-Films
Voevodin AA, Capano MA, Laube SJ, Donley MS, Zabinski JS
Thin Solid Films, 298(1-2), 107, 1997