화학공학소재연구정보센터
검색결과 : 22건
No. Article
1 Tyrosine capped silver nanoparticles: A new fluorescent sensor for the quantitative determination of copper(II) and cobalt(II) ions
Contino A, Maccarrone G, Zimbone M, Reitano R, Musumeci P, Calcagno L, Oliveri IP
Journal of Colloid and Interface Science, 462, 216, 2016
2 Fine tuning the pH triggers the enantiorecognition of underivatized amino acids by silver nanoparticles: A novel approach based on the focused use of solution equilibria
Contino A, Maccarrone G, Zimbone M, Musumeci P, Calcagno L, Pannitteri S
Journal of Colloid and Interface Science, 443, 30, 2015
3 Proton driven acceleration by intense laser pulses irradiating thin hydrogenated targets
Torrisi L, Cutroneo M, Cavallaro S, Giuffrida L, Ando L, Cirrone P, Bertuccio G, Puglisi D, Calcagno L, Verona C, Picciotto A, Krasa J, Margarone D, Velyhan A, Laska L, Krousky E, Pfeiffer M, Skala J, Ullschmied J, Wolowski J, Badziak J, Rosinski M, Ryc L, Szydlowski A
Applied Surface Science, 272, 2, 2013
4 4H-SiC epitaxial layer growth by trichlorosilane (TCS)
La Via F, Izzo G, Mauceri M, Pistone G, Condorelli G, Perdicaro L, Abbondanza G, Calcagno L, Foti G, Crippa D
Journal of Crystal Growth, 311(1), 107, 2008
5 New achievements on CVD based methods for SIC epitaxial growth
Crippa D, Valente GL, Ruggiero A, Neri L, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Abbondanza G, Abbagnale G, Veneroni A, Omarini F, Zamolo L, Masi M, Roccaforte F, Giannazzo F, Di Franco S, La Via F
Materials Science Forum, 483, 67, 2005
6 Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes
La Via F, Roccaforte F, Di Franco S, Ruggiero A, Neri L, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Abbondanza G, Abbagnale G, Valente GL, Crippa D
Materials Science Forum, 483, 429, 2005
7 Defect evolution in ion irradiated 6H-SiC epitaxial layers
Ruggiero A, Zimbone M, Roccaforte F, Libertino S, La Via F, Reitano R, Calcagno L
Materials Science Forum, 483, 485, 2005
8 Defects in He+ irradiated 6H-SiC probed by DLTS and LTPL measurements
Ruggiero A, Libertino S, Mauceri M, Reitano R, Musumeci P, Roccaforte F, La Via F, Calcagno L
Materials Science Forum, 457-460, 493, 2004
9 Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier
La Via F, Roccaforte F, Raineri V, Mauceri M, Ruggiero A, Musumeci P, Calcagno L
Materials Science Forum, 457-460, 861, 2004
10 Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC
Roccaforte F, La Via F, Baeri A, Raineri V, Calcagno L, Mangano F
Materials Science Forum, 457-460, 865, 2004