검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
An integrated optical modulator operating at cryogenic temperatures Eltes F, Villarreal-Garcia GE, Caimi D, Siegwart H, Gentile AA, Hart A, Stark P, Marshall GD, Thompson MG, Barreto J, Fompeyrine J, Abel S Nature Materials, 19(11), 1164, 2020 |
| 2 |
Large Pockels effect in micro-and nanostructured barium titanate integrated on silicon Abel S, Eltes F, Ortmann JE, Messner A, Castera P, Wagner T, Urbonas D, Rosa A, Gutierrez AM, Tulli D, Ma P, Baeuerle B, Josten A, Heni W, Caimi D, Czornomaz L, Demkov AA, Leuthold J, Sanchis P, Fompeyrine J Nature Materials, 18(1), 42, 2019 |
| 3 |
Large Pockels effect in micro-and nanostructured barium titanate integrated on silicon Abel S, Eltes F, Ortmann JE, Messner A, Castera P, Wagner T, Urbonas D, Rosa A, Gutierrez AM, Tulli D, Ma P, Baeuerle B, Josten A, Heni W, Caimi D, Czornomaz L, Demkov AA, Leuthold J, Sanchis P, Fompeyrine J Nature Materials, 18(1), 42, 2019 |
| 4 |
DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration Deshpande V, Djara V, O'Connor E, Hashemi P, Balakrishnan K, Caimi D, Sousa M, Czornomaz L, Fompeyrine J Solid-State Electronics, 128, 87, 2017 |
| 5 |
Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H-2/Ar anneal Djara V, Czornomaz L, Deshpande V, Daix N, Uccelli E, Caimi D, Sousa M, Fompeyrine J Solid-State Electronics, 115, 103, 2016 |
| 6 |
Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding Rossel C, Weigele P, Czornomaz L, Daix N, Caimi D, Sousa M, Fompeyrine J Solid-State Electronics, 98, 88, 2014 |
| 7 |
Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars Richter M, Uccelli E, Taboada AG, Caimi D, Daix N, Sousa M, Marchiori C, Siegwart H, Falub CV, von Kanel H, Isa F, Isella G, Pezous A, Dommann A, Niedermann P, Fompeyrine J Journal of Crystal Growth, 378, 109, 2013 |
| 8 |
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs Czornomaz L, El Kazzi M, Hopstaken M, Caimi D, Machler P, Rossel C, Bjoerk M, Marchiori C, Siegwart H, Fompeyrine J Solid-State Electronics, 74, 71, 2012 |
| 9 |
GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy Richter M, Rossel C, Webb DJ, Topuria T, Gerl C, Sousa M, Marchiori C, Caimi D, Siegwart H, Rice PM, Fompeyrine J Journal of Crystal Growth, 323(1), 387, 2011 |