검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Investigating manufacturing options for industrial PERL-type Si solar cells Cacciato A, Duerinckx F, Baert K, Moors M, Caremans T, Leys G, De Keersmaecker K, Szlufcik J Solar Energy Materials and Solar Cells, 113, 153, 2013 |
| 2 |
Industrial PERL-type solar cells exceeding 19% with screen-printed contacts and homogeneous emitter Moors M, Baert K, Caremans T, Duerinckx F, Cacciato A, Szlufcik J Solar Energy Materials and Solar Cells, 106, 84, 2012 |
| 3 |
A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology Cacciato A, Breuil L, Dekker H, Zahid M, Kar GS, Everaert JL, Schoofs G, Shi X, Van den Bosch G, Jurczak M, Debusschere I, Van Houdt J, Cockburn A, Date L, Xa LQ, Le M, Lee W Electrochemical and Solid State Letters, 14(7), H271, 2011 |
| 4 |
Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects Adelmann C, Swerts J, Richard O, Conard T, Popovici M, Meersschaut J, Afanas'ev VV, Breuil L, Cacciato A, Opsomer K, Brijs B, Tielens H, Pourtois G, Bender H, Jurczak M, Van Houdt J, Van Elshocht S, Kittl JA Journal of the Electrochemical Society, 158(8), H778, 2011 |
| 5 |
Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation Suhane A, Cacciato A, Richard O, Arreghini A, Adelmann C, Swerts J, Rothschild O, Van den Bosch G, Breuil L, Bender H, Jurczak M, Debusschere I, Kittl JA, De Meyer K, Van Houdt J Solid-State Electronics, 65-66, 177, 2011 |
| 6 |
Physical understanding and modeling of SANOS retention in programmed state Furnemont A, Cacciato A, Breuil L, Rosmeulen M, Maes H, De Meyer K, Van Houdt J Solid-State Electronics, 52(4), 577, 2008 |
| 7 |
Onset and recovery of electrical instabilities in conducting double-layer dielectric films Evseev S, Cacciato A Journal of the Electrochemical Society, 152(2), F15, 2005 |
| 8 |
Optimization of interlevel dielectrics for embedded nonvolatile deep submicrometer technologies Cacciato A, Dormans D, Scarpa A, Habas P, de Keijser M, van de Ven G Journal of the Electrochemical Society, 152(5), G398, 2005 |
| 9 |
Independence of the soft breakdown phenomenon from the gate material - Soft- vs. hard-gate capacitors Cacciato A, Evseev S Journal of the Electrochemical Society, 149(10), F149, 2002 |
| 10 |
Minimizing the effects of hardware marginality on charging damage during plasma-enhanced chemical vapor dielectric deposition Cacciato A Journal of the Electrochemical Society, 148(12), F207, 2001 |