검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells Finger F, Astakhov O, Bronger T, Carius R, Chen T, Dasgupta A, Gordijn A, Houben L, Huang Y, Klein S, Luysberg M, Wang H, Xiao L Thin Solid Films, 517(12), 3507, 2009 |
| 2 |
SiC film formation from fluorosilane gas by plasma CVD Suzuki H, Araki H, Tosa M, Noda T Journal of Crystal Growth, 294(2), 464, 2006 |
| 3 |
Improvment crystallinity of SiC films by addition of CF4 in HFCVD Wang GJ, Wang B, Huang AP, Zhu MK, Yu MN, Yan H Journal of Crystal Growth, 267(1-2), 173, 2004 |
| 4 |
Low temperature oxidation of CVD SiC by electron cyclotron resonance plasma Goto T, Masumoto H, Niizuma M Materials Chemistry and Physics, 75(1-3), 235, 2002 |
| 5 |
Aluminum incorporation into 4H-SiC layers during epitaxial growth in a hot-wall CVD system Wagner G, Leitenberger W, Irmscher K, Schmid F, Laube M, Pensl G Materials Science Forum, 389-3, 207, 2002 |
| 6 |
Computational modeling of SiC epitaxial growth in a hot wall reactor Ji W, Lofgren PM, Hallin C, Gu CY, Zhou G Journal of Crystal Growth, 220(4), 560, 2000 |