1 |
Shape transitions of Cu3Si islands grown on Si(111) and Si(100) Srinadhu ES, Harriss JE, Sosolik CE Applied Surface Science, 465, 201, 2019 |
2 |
Preparation of Cu1-xTax films and the material interaction in the Si/Cu1-xTax/Cu structure Lin CT, Lin KL Materials Chemistry and Physics, 82(2), 306, 2003 |
3 |
Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodes Yang WL, Wu WF, Liu DG, Wu CC, Ou KL Solid-State Electronics, 45(1), 149, 2001 |
4 |
Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C Luo JS, Lin WT, Chang CY, Shih PS Thin Solid Films, 346(1-2), 207, 1999 |
5 |
A surface science study of model catalysts. 2. Metal-support interactions in Cu/SiO2 model catalysts van den Oetelaar LCA, Partridge A, Toussaint SLG, Flipse CFJ, Brongersma HH Journal of Physical Chemistry B, 102(47), 9541, 1998 |
6 |
Sputtered Cr and reactively sputtered CrNx serving as barrier layers against copper diffusion Chuang JC, Tu SL, Chen MC Journal of the Electrochemical Society, 145(12), 4290, 1998 |
7 |
Effect of Silicon-Oxide Thickness on the Direct Synthesis of Dimethyldichlorosilane Yilmaz S, Floquet N, Falconer JL Journal of Catalysis, 159(1), 31, 1996 |
8 |
Selective Copper Chemical-Vapor-Deposition Using Pd-Activated Organosilane Films Potochnik SJ, Pehrsson PE, Hsu DS, Calvert JM Langmuir, 11(6), 1841, 1995 |
9 |
Interaction of Copper-Catalysts and Si(100) for the Direct Synthesis of Methylchlorosilanes Floquet N, Yilmaz S, Falconer JL Journal of Catalysis, 148(1), 348, 1994 |