| 1 |
Co and terpolymer reactivity ratios of chemically amplified resists
Pujari NS, Wang MX, Gonsalves KE
Polymer, 118, 201, 2017 |
| 2 |
Non-chemically amplified resists containing polyhedral oligomeric silsesquioxane for a bilayer resist system
Woo SA, Choi SY, Kim JB
Polymer, 98, 336, 2016 |
| 3 |
극자외선 리소그래피용 화학증폭형 레지스트
최재학, 노영창, 홍성권
Journal of the Korean Industrial and Engineering Chemistry, 17(2), 158, 2006 |
| 4 |
Characterization of chemically amplified resist for X-ray lithography by Fourier transform infrared spectroscopy
Tan TL, Wong D, Lee P, Rawat RS, Springham S, Patran A
Thin Solid Films, 504(1-2), 113, 2006 |
| 5 |
Synthesis and characterization of norbomene-based polymers with 7,7-dimethyloxepan-2-one acid labile groups for chemically amplified photoresists
Kim JB, Lee JJ
Polymer, 43(6), 1963, 2002 |
| 6 |
Chemically amplified resists based on poly(1,4-dioxaspiro[4.4]nonane-2-methyl methacrylate)
Kim JB, Park JJ, Jang JH
Polymer, 41(1), 149, 2000 |
| 7 |
Improvement an lithography pattern profile by plasma treatment
Soo CP, Bourdillon AJ, Valiyaveettil S, Huan A, Wee A, Fan MH, Ang TC, Chan LH
Journal of Vacuum Science & Technology A, 17(4), 1526, 1999 |
| 8 |
Surface roughness development during photoresist dissolution
Flanagin LW, Singh VK, Willson CG
Journal of Vacuum Science & Technology B, 17(4), 1371, 1999 |
| 9 |
Acid diffusion control in chemically amplified resists
Kim JB, Choi JH, Kwon YG, Jung MH, Chang KH
Polymer, 40(4), 1087, 1999 |
| 10 |
Effect of acid structure on deprotection of poly(2-trimethylsilyl-2-propyl methacrylate)
Kim JB, Kim H
Polymer, 40(14), 4055, 1999 |
