검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy Lee J, Kim JC, Kim J, Singh RK, Arjunan AC, Lee H Thin Solid Films, 660, 516, 2018 |
| 2 |
Luminescence and Raman study of alpha-Bi2O3 ceramics Vila M, Diaz-Guerra C, Piqueras J Materials Chemistry and Physics, 133(1), 559, 2012 |
| 3 |
Formation of multiple nanoscale twin boundaries that emit intense light in indirect-gap AlGaAs epilayers Ohno Y, Shoda K, Taishi T, Yonenaga I, Takeda S Applied Surface Science, 254(23), 7633, 2008 |
| 4 |
Scanning tunneling and cathodoluminescence spectroscopy of indium nitride Phillips MR, Zareie MH, Gelhausen O, Drago M, Schmidtling T, Richter W Journal of Crystal Growth, 269(1), 106, 2004 |
| 5 |
Near-surface defect distributions in Cu(In,Ga)Se-2 Rockett A, Liao D, Heath JT, Cohen JD, Strzhemechny YM, Brillson LJ, Ramanathan K, Shafarman WN Thin Solid Films, 431-432, 301, 2003 |
| 6 |
Growth of GaN single crystals from a Na-Ga melt at 750 degrees C and 5 MPa of N-2 Aoki M, Yamane H, Shimada M, Sekiguchi T, Hanada T, Yao T, Sarayama S, DiSalvo FJ Journal of Crystal Growth, 218(1), 7, 2000 |
| 7 |
Determination of relative growth rates of natural quartz crystals Ihinger PD, Zink SI Nature, 404(6780), 865, 2000 |
| 8 |
Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells Levin TM, Jessen GH, Ponce FA, Brillson LJ Journal of Vacuum Science & Technology B, 17(6), 2545, 1999 |
| 9 |
Surface-Science Aspects of Vacuum Microelectronics Schwoebel PR, Brodie I Journal of Vacuum Science & Technology B, 13(4), 1391, 1995 |
| 10 |
Deep-Level Formation at ZnSe/GaAs(100) Interfaces Raisanen AD, Brillson LJ, Vanzetti L, Bonanni A, Franciosi A Journal of Vacuum Science & Technology B, 13(4), 1705, 1995 |