1 |
Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1-xN/GaN HEMTs Peng MZ, Zheng YK, Ge Q, Wei K, Liu XY Solid-State Electronics, 80, 1, 2013 |
2 |
Physical modeling of millimetre wave signal reflection from forward biased PIN diodes Jackson RP, Mitchell SJN, Fusco V Solid-State Electronics, 54(2), 149, 2010 |
3 |
Ultra-high aspect-ratio FinFET technology Jovanovic V, Suligoj T, Poljak M, Civale Y, Nanver LK Solid-State Electronics, 54(9), 870, 2010 |
4 |
Enhancement in the gain of quantum dot laser by increasing overlap integral between electron and hole wave-functions Jo B, Yang Y, Kim J, Ko M, Lee KJ, Lee CR, Kim JS, Choi BS, Oh DK, Leem JY, Kim JS Thin Solid Films, 517(14), 3983, 2009 |
5 |
Abnormal blue shift of InGaN micro-size light emitting diodes Pong BJ, Chen CH, Yen SH, Hsu JF, Tun CJ, Kuo YK, Kuo CH, Chi GC Solid-State Electronics, 50(9-10), 1588, 2006 |
6 |
Enhancement of electroluminescence utilizing confined energy transfer for red light emission Ohmori Y, Kajii H, Sawatani T, Ueta H, Yoshino K Thin Solid Films, 393(1-2), 407, 2001 |
7 |
Evidence of Stress Dependence in SiO2/Si3N4 Encapsulation-Based Layer Disordering of GaAs/AlGaAs Quantum-Well Heterostructures Pepin A, Vieu C, Schneider M, Launois H, Nissim Y Journal of Vacuum Science & Technology B, 15(1), 142, 1997 |
8 |
Preparation of New Electron-Accepting Pi-Conjugated Polyquinoxalines - Chemical and Electrochemical Reduction, Electrically Conducting Properties, and Use in Light-Emitting-Diodes Yamamoto T, Sugiyama K, Kushida T, Inoue T, Kanbara T Journal of the American Chemical Society, 118(16), 3930, 1996 |
9 |
A New Polymeric Triarylamine and Its Use as a Charge-Transport Layer for Polymeric LEDs Kolb ES, Gaudiana RA, Mehta PG Macromolecules, 29(7), 2359, 1996 |
10 |
Interface Exciton Luminescence - An Indication of Interface Inhomogeneities in Single GaAs/GaAlAs Heterostructures Bessolov VN, Evstropov VV, Lebedev MV Journal of Vacuum Science & Technology A, 13(6), 2684, 1995 |