화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1-xN/GaN HEMTs
Peng MZ, Zheng YK, Ge Q, Wei K, Liu XY
Solid-State Electronics, 80, 1, 2013
2 Physical modeling of millimetre wave signal reflection from forward biased PIN diodes
Jackson RP, Mitchell SJN, Fusco V
Solid-State Electronics, 54(2), 149, 2010
3 Ultra-high aspect-ratio FinFET technology
Jovanovic V, Suligoj T, Poljak M, Civale Y, Nanver LK
Solid-State Electronics, 54(9), 870, 2010
4 Enhancement in the gain of quantum dot laser by increasing overlap integral between electron and hole wave-functions
Jo B, Yang Y, Kim J, Ko M, Lee KJ, Lee CR, Kim JS, Choi BS, Oh DK, Leem JY, Kim JS
Thin Solid Films, 517(14), 3983, 2009
5 Abnormal blue shift of InGaN micro-size light emitting diodes
Pong BJ, Chen CH, Yen SH, Hsu JF, Tun CJ, Kuo YK, Kuo CH, Chi GC
Solid-State Electronics, 50(9-10), 1588, 2006
6 Enhancement of electroluminescence utilizing confined energy transfer for red light emission
Ohmori Y, Kajii H, Sawatani T, Ueta H, Yoshino K
Thin Solid Films, 393(1-2), 407, 2001
7 Evidence of Stress Dependence in SiO2/Si3N4 Encapsulation-Based Layer Disordering of GaAs/AlGaAs Quantum-Well Heterostructures
Pepin A, Vieu C, Schneider M, Launois H, Nissim Y
Journal of Vacuum Science & Technology B, 15(1), 142, 1997
8 Preparation of New Electron-Accepting Pi-Conjugated Polyquinoxalines - Chemical and Electrochemical Reduction, Electrically Conducting Properties, and Use in Light-Emitting-Diodes
Yamamoto T, Sugiyama K, Kushida T, Inoue T, Kanbara T
Journal of the American Chemical Society, 118(16), 3930, 1996
9 A New Polymeric Triarylamine and Its Use as a Charge-Transport Layer for Polymeric LEDs
Kolb ES, Gaudiana RA, Mehta PG
Macromolecules, 29(7), 2359, 1996
10 Interface Exciton Luminescence - An Indication of Interface Inhomogeneities in Single GaAs/GaAlAs Heterostructures
Bessolov VN, Evstropov VV, Lebedev MV
Journal of Vacuum Science & Technology A, 13(6), 2684, 1995