| 1 |
Annealing effects on the bonding structures, optical and mechanical properties for radio frequency reactive sputtered germanium carbide films
Hu CQ, Zhu JQ, Zheng WT, Han JC
Applied Surface Science, 255(6), 3552, 2009 |
| 2 |
Very high temperature chemical vapor deposition of new carbon thin films using organic semiconductor molecular beam sources
Noguchi T, Shimada T, Hanzawa A, Hasegawa T
Thin Solid Films, 518(2), 778, 2009 |
| 3 |
Nanocrystalline SiC films prepared by direct deposition of carbon and silicon ions
Semenov AV, Puzikov VM, Dobrotvorskaya MV, Fedorov AG, Lopin AV
Thin Solid Films, 516(10), 2899, 2008 |
| 4 |
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
Hu ZH, Liao XB, Diao HW, Kong GL, Zeng XB, Xu YY
Journal of Crystal Growth, 264(1-3), 7, 2004 |
| 5 |
Preparation of B-doped a-Si1-xCx : H films and heterojunction p-i-n solar cells by the Cat-CVD method
Chikusa K, Takemoto K, Itoh T, Yoshida N, Nonomura S
Thin Solid Films, 430(1-2), 245, 2003 |
| 6 |
Electrochemical machining of the steel 100Cr6 in aqueous NaCl and NaNO3 solutions: microstructure of surface films formed by carbides
Haisch T, Mittemeijer E, Schultze JW
Electrochimica Acta, 47(1-2), 235, 2001 |
| 7 |
Closed-chamber CVD - a new method for preparation of group-IV thin films for large area electronics
Koynov S, Tzolov M, Brogueira P, Schwarz R
Thin Solid Films, 383(1-2), 206, 2001 |
| 8 |
Deposition of a-SiC : H thin film from organosilicon material by remote plasma CVD method
Xu YY, Muramatsu T, Taniyama M, Aoki T, Hatanaka Y
Thin Solid Films, 368(2), 181, 2000 |
| 9 |
Optoelectronic properties of p-type layers for amorphous-silicon solar cells prepared using helium dilution
Carabe J, Gandia JJ, Gonzalez N, Gutierrez MT
Solar Energy Materials and Solar Cells, 57(1), 97, 1999 |
| 10 |
Enhancement of TiC/stainless steel interfaces by N+-implantation
Kang TW, Hong CY, Chung CK, Kim TW
Thin Solid Films, 342(1-2), 184, 1999 |
