검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
The effect of substrate polarity on the growth of InN by RF-MBE Naoi H, Matsuda F, Araki T, Suzuki A, Nanishi Y Journal of Crystal Growth, 269(1), 155, 2004 |
| 2 |
Temperature dependence of flat Ge/Si(001) heterostructures as observed by CAICISS Tsushima R, Katayama M, Fujino T, Shindo M, Okuno T, Oura K Applied Surface Science, 216(1-4), 19, 2003 |
| 3 |
Low-temperature growth of AlN on nearly lattice-matched MnO substrates Ito S, Fujioka H, Ohta J, Sasaki A, Liu J, Yoshimoto M, Koinuma H, Oshima M Applied Surface Science, 216(1-4), 508, 2003 |
| 4 |
Ion beam as a probe to study the behavior of hydrogen on silicon surfaces Oura K, Katayama M Current Applied Physics, 3(1), 39, 2003 |
| 5 |
Structure analysis of the Si(111)-root-3x root 3-Sb surface by means of CAICISS combined with LEED-AES-RBS techniques Kishi N, Morita K Current Applied Physics, 3(1), 57, 2003 |
| 6 |
Influence of interface structures on Sn thin film growth on Si(111) surface Ryu JT, Fujino T, Katayama M, Kim YB, Oura K Applied Surface Science, 190(1-4), 139, 2002 |
| 7 |
Effects of surface treatments of 6H-SiC upon metal-SiC interfaces Abe K, Sumitomo M, Sumi T, Eryu O, Nakashima K Materials Science Forum, 389-3, 909, 2002 |
| 8 |
Study of the topmost surface structure of a y-cut LiNbO3 single crystal with coaxial impact collision ion scattering spectroscopy (CAICISS) Yamada T, Choso T, Tabata K, Suzuki E Applied Surface Science, 171(1-2), 106, 2001 |
| 9 |
Characterization of initial one monolayer growth of Ge on Si(100) and Si on Ge(100) Ikeda K, Yanase J, Sugahara S, Uchida Y, Matsumura M Applied Surface Science, 175, 1, 2001 |
| 10 |
A study on initial oxidation of Si(100)-2 X 1 surfaces by coaxial impact collision ion scattering spectroscopy Wasekura M, Higashi M, Ikeda H, Sakai A, Zaima S, Yasuda Y Applied Surface Science, 159, 35, 2000 |