1 |
Observation of triangular terraces and triangular craters of CaF2 film on Si(111) substrate Horio Y, Satoh S Applied Surface Science, 190(1-4), 80, 2002 |
2 |
Growth and nonlinear optical properties of GaAs absorber layers for AlGaAs/CaF2 semiconductor saturable absorber mirrors Schon S, Haiml M, Achermann M, Keller U Journal of Vacuum Science & Technology B, 18(3), 1701, 2000 |
3 |
Self-assembled CaF2 nanostructures on silicon Petrovykh DY, Viernow J, Lin JL, Leibsle FM, Men FK, Kirakosian A, Himpsel FJ Journal of Vacuum Science & Technology A, 17(4), 1415, 1999 |
4 |
Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy LaBella VP, Shusterman Y, Schowalter LJ, Ventrice CA Journal of Vacuum Science & Technology A, 16(3), 1692, 1998 |
5 |
Annealing of CaF2 adlayers grown on Si(111): investigations of the morphology by atomic force microscopy Wollschlager J, Pietsch H, Kayser R, Klust A Thin Solid Films, 336(1-2), 120, 1998 |
6 |
Scanning-Tunneling-Microscopy and Ballistic-Electron-Emission Spectroscopy Studies of Molecular-Beam Epitaxially Grown Pt/CaF2/Si(111) Structures Labella VP, Schowalter LJ, Ventrice CA Journal of Vacuum Science & Technology B, 15(4), 1191, 1997 |
7 |
Radiation-Damage of Epitaxial CaF2 Overlayers on Si(111) Studied by Photon-Stimulated Desorption - Formation of Surface-F Centers Chakarian V, Durbin TD, Varekamp PR, Yarmoff JA Journal of Vacuum Science & Technology A, 12(4), 2159, 1994 |
8 |
Probing the CaF2 Density-of-States at Au/CaF2/N-Si(111) Interfaces with Photoelectron-Spectroscopy and Ballistic-Electron-Emission Microscopy Cuberes MT, Bauer A, Wen HJ, Prietsch M, Kaindl G Journal of Vacuum Science & Technology B, 12(4), 2646, 1994 |