| 1 |
Effect of different trap states on the electron transport of photoanodes in dye sensitized solar cells
Zhang J, Feng JW, Hong Y, Zhu YJ, Han LY
Journal of Power Sources, 257, 264, 2014 |
| 2 |
Determination of bulk and interface density of states in polycrystalline silicon thin film transistors
Arpatzanis N, Dimitriadis CA, Siskos S, Hatzopoulos AA, Kamarinos G
Thin Solid Films, 515(19), 7581, 2007 |
| 3 |
The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection
Huang CH, Hwu JG
Solid-State Electronics, 49(10), 1599, 2005 |
| 4 |
Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si wafer
Yoshida H, Nakanishi R, Kishino S
Journal of Crystal Growth, 210(1-3), 379, 2000 |
| 5 |
A new voltage transient technique for deep-level studies in depletion-mode field-effect transistors
Kolev P, Deen MH, Hardy T, Murowinski R
Journal of the Electrochemical Society, 145(9), 3258, 1998 |
