검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures Bengi S, Bulbul MM Current Applied Physics, 13(8), 1819, 2013 |
| 2 |
Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes Ozer M, Yildiz DE, Altindal S, Bulbul MM Solid-State Electronics, 51(6), 941, 2007 |
| 3 |
Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures Zeyrek S, Altindal S, Yuzer H, Bulbul MM Applied Surface Science, 252(8), 2999, 2006 |
| 4 |
The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer Dokme I, Altindal S, Bulbul MM Applied Surface Science, 252(22), 7749, 2006 |