검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Indium incorporation into InGaN: The role of the adlayer Rossow U, Horenburg P, Ketzer F, Bremers H, Hangleiter A Journal of Crystal Growth, 464, 112, 2017 |
| 2 |
Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells Rossow U, Hoffmann L, Bremers H, Buss ER, Ketzer F, Langer T, Hangleiter A, Mehrtens T, Schowalter M, Rosenauer A Journal of Crystal Growth, 414, 49, 2015 |
| 3 |
Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region Rossow U, Kruse A, Jonen H, Hoffmann L, Ketzer F, Langer T, Buss R, Bremers H, Hangleiter A, Mehrtens T, Schowalter M, Rosenauer A Journal of Crystal Growth, 370, 105, 2013 |
| 4 |
Growth of the active zone in nitride based long wavelength laser structures Rossow U, Jonen H, Brendel M, Drager A, Langer T, Hoffmann L, Bremers H, Hangleiter A Journal of Crystal Growth, 315(1), 250, 2011 |
| 5 |
Growth and characterization of InGaN by RF-MBE Kraus A, Hammadi S, Hisek J, Buss R, Jonen H, Bremers H, Rossow U, Sakalauskas E, Goldhahn R, Hangleiter A Journal of Crystal Growth, 323(1), 72, 2011 |
| 6 |
Imposed layer-by-layer growth of ZnO on GaN/sapphire substrates using pulsed laser interval deposition Hirsch A, Wille C, Bremers H, Rossow U, Hangleiter A, Ludwig F, Schilling M Thin Solid Films, 519(22), 7683, 2011 |
| 7 |
Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE Jonen H, Rossow U, Langer T, Drager A, Hoffmann L, Bremers H, Hangleiter A, Bertram F, Metzner S, Christen J Journal of Crystal Growth, 310(23), 4987, 2008 |
| 8 |
Aluminum incorporation in AlxGa1-xN-layers and implications for growth optimization Rossow U, Fuhrmann D, Litte T, Retzaff T, Hoffmann L, Bremers H, Hangleiter A Journal of Crystal Growth, 298, 361, 2007 |