검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE Matta S, Brault J, Korytov M, Vuong TQP, Chaix C, Al Khalfioui M, Vennegues P, Massies J, Gil B Journal of Crystal Growth, 499, 40, 2018 |
| 2 |
Dislocation densities reduction in MBE-grown AIN thin films by high-temperature annealing Nemoz M, Dagher R, Matta S, Michon A, Vennegues P, Brault J Journal of Crystal Growth, 461, 10, 2017 |
| 3 |
Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation Damilano B, Vezian VS, Portail M, Alloing B, Brault J, Courville A, Brandli BV, Leroux M, Massies J Journal of Crystal Growth, 477, 262, 2017 |
| 4 |
GaN quantum dot polarity determination by X-ray photoelectron diffraction Romanyuk O, Bartos I, Brault J, De Mierry P, Paskova T, Jiricek P Applied Surface Science, 389, 1156, 2016 |
| 5 |
Suitability assessment of a continuous process combining thermo-mechano-chemical and bio-catalytic action in a single pilot-scale twin-screw extruder for six different biomass sources Vandenbossche V, Brault J, Hernandez-Melendez O, Evon P, Barzana E, Vilarem G, Rigal L Bioresource Technology, 211, 146, 2016 |
| 6 |
Differential impact of glucose levels and advanced glycation end-products on tubular cell viability and pro-inflammatory/profibrotic functions Franko B, Brault J, Jouve T, Beaumel S, Benhamou PY, Zaoui P, Stasia MJ Biochemical and Biophysical Research Communications, 451(4), 627, 2014 |
| 7 |
Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Xia Y, Brault J, Vennegues P, Nemoz M, Teisseire M, Leroux M, Chauveau JM Journal of Crystal Growth, 388, 35, 2014 |
| 8 |
Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes Brault J, Damilano B, Kahouli A, Chenot S, Leroux M, Vinter B, Massies J Journal of Crystal Growth, 363, 282, 2013 |
| 9 |
Growth of n-face polarity III-nitride heterostructures on C-face 4H-SiC by plasma-assisted MBE Monroy E, Sarigiannidou E, Fossard F, Enjalbert F, Gogneau N, Bellet-Amalric E, Brault J, Rouviere JL, Dang LS, Monnoye S, Mank H, Daudin B Materials Science Forum, 457-460, 1573, 2004 |
| 10 |
Direct growth of high quality GaN by plasma assisted molecular beam epitaxy on 4H-SiC substrates Fossard F, Brault J, Gogneau N, Monroy E, Enjalbert F, Dang LS, Bellet-Amalric E, Monnoye S, Mank H, Daudin B Materials Science Forum, 457-460, 1577, 2004 |