검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Brillson LJ, Bradley ST, Tumakha SH, Goss SH, Sun XLL, Okojie RS, Hwang J, Schaff WJ Applied Surface Science, 244(1-4), 257, 2005 |
| 2 |
Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces Sun XL, Bradley ST, Jessen GH, Look DC, Molnar RJ, Brillson LJ Journal of Vacuum Science & Technology A, 22(6), 2284, 2004 |
| 3 |
Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces Smith PE, Goss SH, Bradley ST, Hudait MK, Lin Y, Ringel SA, Brillson LJ Journal of Vacuum Science & Technology B, 22(2), 554, 2004 |
| 4 |
Deep level defects and doping in high Al mole fraction AlGaN Bradley ST, Goss SH, Brillson LJ, Hwang J, Schaff WJ Journal of Vacuum Science & Technology B, 21(6), 2558, 2003 |
| 5 |
Low-energy electron-excited nanoluminescence studies of GaN and related materials Brillson LJ, Bradley ST, Goss SH, Sun X, Murphy MJ, Schaff WJ, Eastman LF, Look DC, Molnar RJ, Ponce FA, Ikeo N, Sakai Y Applied Surface Science, 190(1-4), 498, 2002 |
| 6 |
Near-surface electronic defects and morphology of CuIn1-xGaxSe2 Strzhemechny YM, Smith PE, Bradley ST, Liao DX, Rockett AA, Ramanathan K, Brillson LJ Journal of Vacuum Science & Technology B, 20(6), 2441, 2002 |
| 7 |
Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy Jessen GH, White BD, Bradley ST, Smith PE, Brillson LJ, Van Nostrand JE, Fitch R, Via GD, Gillespie JK, Dettmer RW, Sewell JS Solid-State Electronics, 46(9), 1427, 2002 |
| 8 |
Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces Brillson LJ, Young AP, Jessen GH, Levin TM, Bradley ST, Goss SH, Bae J, Ponce FA, Murphy MJ, Schaff WJ, Eastman LF Applied Surface Science, 175, 442, 2001 |