화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Monte Carlo analysis of the dynamic behavior of III-V MOSFETs for low-noise RF applications
Shi M, Saint-Martin J, Bournel A, Querlioz D, Wichmann N, Bollaert S, Danneville F, Dollfus P
Solid-State Electronics, 87, 51, 2013
2 Multiscale simulation of carbon nanotube transistors
Maneux C, Fregonese S, Zimmer T, Retailleau S, Nguyen HN, Querlioz D, Bournel A, Dollfus P, Triozon F, Niquet YM, Roche S
Solid-State Electronics, 89, 26, 2013
3 A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
Palestri P, Alexander C, Asenov A, Aubry-Fortuna V, Baccarani G, Bournel A, Braccioli M, Cheng B, Dollfus P, Esposito A, Esseni D, Fenouillet-Beranger C, Fiegna C, Fiori G, Ghetti A, Iannaccone G, Martinez A, Majkusiak B, Monfray S, Peikert V, Reggiani S, Riddet C, Saint-Martin J, Sangiorgi E, Schenk A, Selmi L, Silvestri L, Toniutti P, Walczak J
Solid-State Electronics, 53(12), 1293, 2009
4 Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation
Bournel A, Aubry-Fortuna V, Saint-Martin J, Dollfus P
Solid-State Electronics, 51(4), 543, 2007
5 Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
Saint-Martin J, Bournel A, Dollfus P
Solid-State Electronics, 50(1), 94, 2006
6 Physical and magnetic properties of Co-oxide-GaAs contacts
Delmouly V, Bournel A, Tremblay G, Hesto P
Thin Solid Films, 384(2), 282, 2001