화학공학소재연구정보센터
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No. Article
1 Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding
Coste M, Moliere T, Cherkashin N, Hallais G, Vincent L, Bouchier D, Renard C
Thin Solid Films, 647, 13, 2018
2 Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2
Renard C, Cherkashin N, Jaffre A, Moliere T, Hallais G, Vincent L, Alvarez J, Mencaraglia D, Michel A, Bouchier D
Journal of Crystal Growth, 401, 554, 2014
3 Comments on the article: "Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure" by H. M. Tawancy (Journal of Materials Science DOI: 10.1007/s10853-011-5728-9)
Bouchier D, Aboelfotoh O
Journal of Materials Science, 47(1), 100, 2012
4 Faceting mechanisms of Si nanowires and gold spreading
Vincent L, Boukhicha R, Gardes C, Renard C, Yam V, Fossard F, Patriarche G, Bouchier D
Journal of Materials Science, 47(4), 1609, 2012
5 Gold nanocluster distribution on faceted and kinked Si nanowires
Boukhicha R, Vincent L, Renard C, Gardes C, Yam V, Fossard F, Patriarche G, Jabeen F, Bouchier D
Thin Solid Films, 520(8), 3304, 2012
6 Size effect on Ge nanowires growth kinetics by the vapor-liquid-solid mechanism
Renard C, Boukhicha R, Gardes C, Fossard F, Yam V, Vincent L, Bouchier D, Hajjar S, Bubendorff JL, Garreau G, Pirri C
Thin Solid Films, 520(8), 3314, 2012
7 Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy
Kociniewski T, Fossard F, Boulmer J, Bouchier D
Thin Solid Films, 518(9), 2542, 2010
8 Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon
Cammilleri D, Fossard F, Debarre D, Manh CT, Dubois C, Bustarret E, Marcenat C, Achatz P, Bouchier D, Boulmer J
Thin Solid Films, 517(1), 75, 2008
9 Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities
Boucaud P, El Kurdi M, David S, Checoury X, Li X, Ngo TP, Sauvage S, Bouchier D, Fishman G, Kermarrec O, Campidelli Y, Bensahel D, Akatsu T, Richtarch C, Ghyselen B
Thin Solid Films, 517(1), 121, 2008
10 Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror
Cammilleri D, Fossard F, Halbwax M, Manh CT, Yam N, Debarre D, Boulmer J, Bouchier D
Thin Solid Films, 517(1), 327, 2008