화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
Najmzadeh M, Boucart K, Riess W, Ionescu AM
Solid-State Electronics, 54(9), 935, 2010
2 A new definition of threshold voltage in Tunnel FETs
Boucart K, Ionescu AM
Solid-State Electronics, 52(9), 1318, 2008
3 Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
Boucart K, Ionescu AM
Solid-State Electronics, 51(11-12), 1500, 2007