| 1 |
Improved electrical performance and transparency of bottom-gate, bottom-contact single-walled carbon nanotube transistors using graphene source/drain electrodes
Shin HW, Oh JW, Kim YJ, Song JG, Lee CH, Shin KY
Journal of Industrial and Engineering Chemistry, 81, 488, 2020 |
| 2 |
Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer
Lee SK, Seok KH, Chae HJ, Lee YH, Han JS, Jo HA, Joo SK
Solid-State Electronics, 129, 6, 2017 |
| 3 |
Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases
Jin JD, Luo Y, Bao P, Brox-Nilsen C, Potter R, Song AM
Thin Solid Films, 552, 192, 2014 |
| 4 |
Comparative studies on electrical bias temperature instabilities of In-Ga-Zn-O thin film transistors with different device configurations
Ryu MK, Park SHK, Hwang CS, Yoon SM
Solid-State Electronics, 89, 171, 2013 |
| 5 |
Characteristics of ZnO thin film transistor using Ta2O5 gate dielectrics
Zhang JQ, Li ZX, Shen LP, Ye C, Wang BY, Wang H
Thin Solid Films, 544, 281, 2013 |
| 6 |
Ionic nucleated crystallized silicon thin-film transistor fabricated at 130 degrees C
Lin CW, Yang SH, Li CY
Thin Solid Films, 544, 457, 2013 |
| 7 |
High-performance vertically stacked bottom-gate and top-gate polycrystalline silicon thin-film transistors for three-dimensional integrated circuits
Lee IC, Tsai TC, Tsai CC, Yang PY, Wang CL, Cheng HC
Solid-State Electronics, 77, 26, 2012 |
| 8 |
A study on the dry etching characteristics of indium gallium zinc oxide and molybdenum by the CCP-RIE system for the 4 mask process
Shin DC, Park KS, Park BR, Choe H, Jeon JH, Lee KW, Seo JH
Current Applied Physics, 11(5), S45, 2011 |
| 9 |
High mobility bottom gate nanocrystalline-Si thin-film transistors
Hara M
Thin Solid Films, 519(11), 3922, 2011 |
| 10 |
Characteristics of laser-annealed ZnO thin film transistors
Kim JJ, Bak JY, Lee JH, Kim HS, Jang NW, Yun Y, Lee WJ
Thin Solid Films, 518(11), 3022, 2010 |
