| 1 |
Dependence of optimum V/III ratio on substrate orientation, and influence of buffer layer on MOVPE grown InSb/GaSb quantum dots
Ahia CC, Tile N, Botha JR
Journal of Crystal Growth, 507, 157, 2019 |
| 2 |
Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells
Wagener MC, Montesdeoca D, Lu Q, Marshall ARJ, Krier A, Botha JR, Carrington PJ
Solar Energy Materials and Solar Cells, 189, 233, 2019 |
| 3 |
Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE
Tile N, Ahia CC, Botha JR
Journal of Crystal Growth, 500, 28, 2018 |
| 4 |
An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures
Ahia CC, Tile N, Urgessa ZN, Botha JR, Neethling JH
Journal of Crystal Growth, 458, 53, 2017 |
| 5 |
Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current-voltage measurements
Venter A, Murape DM, Botha JR, Auret FD
Thin Solid Films, 574, 32, 2015 |
| 6 |
Surface modification of bulk n-InAs (111)A etched in bromine-methanol
Eassa N, Betz R, Coetsee E, Swart HC, Venter A, Botha JR
Current Applied Physics, 13(2), 366, 2013 |
| 7 |
AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation
Miya SS, Wagener V, Botha JR
Journal of Crystal Growth, 370, 177, 2013 |
| 8 |
Treatment for GaSb surfaces using a sulphur blended(NH4)(2)S/(NH4)(2)SO4 solution
Murape DM, Eassa N, Neethling JH, Betz R, Coetsee E, Swart HC, Botha JR, Venter A
Applied Surface Science, 258(18), 6753, 2012 |
| 9 |
Growth temperature dependence of the background doping in MOVPE-grown InAs
Wagener MC, Wagener V, Botha JR
Journal of Crystal Growth, 340(1), 13, 2012 |
| 10 |
Effect of growth parameters on MgxZn1-xO films grown by metalorganic chemical vapour deposition
Talla K, Dangbegnon JK, Wagener MC, Weber J, Botha JR
Journal of Crystal Growth, 315(1), 297, 2011 |
