화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Homo-heterojunction concept: From simulations to high efficiency solar cell It demonstration
Carrere T, Lachaume R, Thai QM, Coig M, Kleider JP, Munoz D
Solar Energy Materials and Solar Cells, 182, 178, 2018
2 Improvement of trench MOS barrier Schottky rectifier by using high-energy counter-doping trench-bottom implantation
Juang MH, Yu J, Jang SL
Current Applied Physics, 11(3), 698, 2011
3 Shallow boron dopant on silicon - An MD study
Perez-Martin AMC, Jimenez-Rodriguez JJ, Jimenez-Saez JC
Applied Surface Science, 234(1-4), 228, 2004
4 Reactive ion etching of Silicon Carbide with patterned Boron implantation
Vassilevski K, Hedley J, Horsfall AB, Johnson CM, Wright NG
Materials Science Forum, 457-460, 925, 2004
5 Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
Chang TC, Mor YS, Liu PT, Tsai TM, Chen CW, Sze SM, Mei YJ
Thin Solid Films, 398-399, 637, 2001
6 Modeling of Damage Accumulation During Ion-Implantation into Single-Crystalline Silicon
Posselt M, Schmidt B, Murthy CS, Feudel T, Suzuki K
Journal of the Electrochemical Society, 144(4), 1495, 1997