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| No. | Article |
|---|---|
| 1 |
Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry Pisonero J, Lobo L, Bordel N, Tempez A, Bensaoula A, Badi N, Sanz-Medel A Solar Energy Materials and Solar Cells, 94(8), 1352, 2010 |