검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD Yazdanfar M, Stenberg P, Booker ID, Ivanov IG, Kordina O, Pedersen H, Janzen E Journal of Crystal Growth, 380, 55, 2013 |
| 2 |
The influence of growth conditions on carrier lifetime in 4H-SiC epilayers Lilja L, Booker ID, ul Hassan J, Janzen E, Bergman JP Journal of Crystal Growth, 381, 43, 2013 |
| 3 |
On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE Mauder C, Booker ID, Fahle D, Boukiour H, Behmenburg H, Khoshroo LR, Woitok JF, Vescan A, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 315(1), 220, 2011 |