검색결과 : 16건
No. | Article |
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1 |
Quasi-vertical multi-tooth thin film transistors based on low-temperature technology (T <= 600 degrees C) Zhang P, Jacques E, Rogel R, Coulon N, Bonnaud O Solid-State Electronics, 79, 26, 2013 |
2 |
P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology Zhang P, Jacques E, Rogel R, Bonnaud O Solid-State Electronics, 86, 1, 2013 |
3 |
Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions Mazari H, Benamara Z, Ameur K, Benseddik N, Bonnaud O, Olier R, Gruzza B Materials Chemistry and Physics, 118(1), 1, 2009 |
4 |
Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices Colder H, Rizk R, Pichon L, Bonnaud O Solid-State Electronics, 50(2), 209, 2006 |
5 |
Solid phase post-treatment of polysilicon films by a continuous argon laser Michaud JF, Rogel R, Mohammed-Brahim T, Sarret M, Bonnaud O Thin Solid Films, 487(1-2), 81, 2005 |
6 |
Influence of precursors gases on LPCVD TFT's characteristics Rogel R, Gautier G, Coulon N, Sarret M, Bonnaud O Thin Solid Films, 427(1-2), 108, 2003 |
7 |
Meyer-Neldel parameter as a figure of merit for quality of thin-film-transistor active layer? Pichon L, Mercha A, Routoure JM, Carin R, Bonnaud O, Mohammed-Brahim T Thin Solid Films, 427(1-2), 350, 2003 |
8 |
Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors Pichon L, Mercha A, Carin R, Mohammed-Brahim T, Bonnaud O, Helen Y Solid-State Electronics, 46(4), 459, 2002 |
9 |
High mobility thin film transistors by Nd : YVO4-laser crystallization Helen Y, Dassow R, Nerding M, Mourgues K, Raoult F, Kohler JR, Mohammed-Brahim T, Rogel R, Bonnaud O, Werner JH, Strunk HP Thin Solid Films, 383(1-2), 143, 2001 |
10 |
Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O Thin Solid Films, 383(1-2), 303, 2001 |