화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Quasi-vertical multi-tooth thin film transistors based on low-temperature technology (T <= 600 degrees C)
Zhang P, Jacques E, Rogel R, Coulon N, Bonnaud O
Solid-State Electronics, 79, 26, 2013
2 P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology
Zhang P, Jacques E, Rogel R, Bonnaud O
Solid-State Electronics, 86, 1, 2013
3 Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions
Mazari H, Benamara Z, Ameur K, Benseddik N, Bonnaud O, Olier R, Gruzza B
Materials Chemistry and Physics, 118(1), 1, 2009
4 Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices
Colder H, Rizk R, Pichon L, Bonnaud O
Solid-State Electronics, 50(2), 209, 2006
5 Solid phase post-treatment of polysilicon films by a continuous argon laser
Michaud JF, Rogel R, Mohammed-Brahim T, Sarret M, Bonnaud O
Thin Solid Films, 487(1-2), 81, 2005
6 Influence of precursors gases on LPCVD TFT's characteristics
Rogel R, Gautier G, Coulon N, Sarret M, Bonnaud O
Thin Solid Films, 427(1-2), 108, 2003
7 Meyer-Neldel parameter as a figure of merit for quality of thin-film-transistor active layer?
Pichon L, Mercha A, Routoure JM, Carin R, Bonnaud O, Mohammed-Brahim T
Thin Solid Films, 427(1-2), 350, 2003
8 Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors
Pichon L, Mercha A, Carin R, Mohammed-Brahim T, Bonnaud O, Helen Y
Solid-State Electronics, 46(4), 459, 2002
9 High mobility thin film transistors by Nd : YVO4-laser crystallization
Helen Y, Dassow R, Nerding M, Mourgues K, Raoult F, Kohler JR, Mohammed-Brahim T, Rogel R, Bonnaud O, Werner JH, Strunk HP
Thin Solid Films, 383(1-2), 143, 2001
10 Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise
Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O
Thin Solid Films, 383(1-2), 303, 2001