검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Epitaxy relationships between Ge-islands and SiC(0001) Ait-Mansour K, Dentel D, Kubler L, Diani M, Bischoff JL, Bolmont D Applied Surface Science, 241(3-4), 403, 2005 |
| 2 |
Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(001) surfaces Dentel D, Ait-Mansour K, Bischoff JL, Kubler L, Bolmont D Applied Surface Science, 235(1-2), 103, 2004 |
| 3 |
Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth Simon L, Louis P, Pirri C, Aubel D, Bischoff JL, Kubler L, Bolmont D Journal of Crystal Growth, 256(1-2), 1, 2003 |
| 4 |
Role of hydrogen during Si capping of strained Ge or Si1-xGex hut clusters Dentel D, Bischoff JL, Kubler L, Bolmont D Thin Solid Films, 336(1-2), 49, 1998 |
| 5 |
Growth of Epitaxial SiGe Nanostructures at Low-Temperature on Si(100) Using Hot-Wire Assisted Gas-Source Molecular-Beam Epitaxy Chelly R, Werckmann J, Angot T, Louis P, Bolmont D, Koulmann JJ Thin Solid Films, 294(1-2), 84, 1997 |
| 6 |
Crystallographic and Electronic-Structure of Cu/Cr/Cu(001) Sandwiches Schieffer P, Rouyer D, Krembel C, Hanf MC, Bolmont D, Gewinner G Thin Solid Films, 275(1-2), 133, 1996 |
| 7 |
Strict Thermal Nitridation Selectivity Between Si and Ge Used as a Chemical Probe of the Outermost Layer of Si1-xGex Alloys and Ge/Si(001) or Si/Ge(001) Heterostructures Aubel D, Diani M, Bischoff JL, Bolmont D, Kubler L Journal of Vacuum Science & Technology B, 12(4), 2699, 1994 |
| 8 |
Electron-Cyclotron-Resonance Plasma Ion-Beam Effects on the Formation of SiC on Si(001) Characterized by in-Situ Photoemission Diani M, Aubel D, Bischoff JL, Kubler L, Bolmont D Thin Solid Films, 241(1-2), 305, 1994 |