| 1 |
Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 483, 265, 2018 |
| 2 |
Unexpected travel of Lomer-type dislocations in Ge/GexSi1-x/Si(001) heterostructures
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Thin Solid Films, 616, 348, 2016 |
| 3 |
Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 338(1), 12, 2012 |
| 4 |
Specific features of formation and propagation of 60 degrees and 90 degrees misfit dislocations in GexS1-x/Si films with x > 0.4
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 312(21), 3080, 2010 |
| 5 |
Formation of edge misfit dislocations in Ge chi Si1-chi (chi similar to 0.4-0.5) films grown on misoriented (001) -> (111) Si substrates
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 310(15), 3422, 2008 |
| 6 |
Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov L
Journal of Crystal Growth, 293(2), 247, 2006 |
| 7 |
Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov L
Journal of Crystal Growth, 297(1), 57, 2006 |
| 8 |
Structures GexSi1-x/Si(001) grown by low-temperature (300-400 degrees C) molecular beam epitaxy: Misfit dislocation propagation
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov LV
Journal of Crystal Growth, 280(1-2), 309, 2005 |
| 9 |
Heterostructures GexSi1-x/Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 degrees C) temperature: specific features of plastic relaxation
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov LV
Thin Solid Films, 466(1-2), 69, 2004 |
| 10 |
InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
Putyato MA, Preobrazhenskii VV, Semyagin BR, Bolkhovityanov YB, Gilinsky AM, Gutakousky AK, Revenko MA, Pchelyakov OP, Feklin DF
Journal of Crystal Growth, 247(1-2), 23, 2003 |
