검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 mu m) grown by MBE Cerutti L, Ducanchez A, Narcy G, Grech P, Boissier G, Garnache A, Tournie E, Genty F Journal of Crystal Growth, 311(7), 1912, 2009 |
| 2 |
Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 mu m Cerutti L, Boissier G, Grech P, Perona A, Angellier J, Rouillard Y, Tournie E, Genty F, Dente GC, Kaspi R Journal of Crystal Growth, 301, 967, 2007 |
| 3 |
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers Wilk A, Genty F, Fraisse B, Boissier G, Grech P, El Gazouli M, Christol P, Oswald J, Simecek T, Hulicius E, Joullie A Journal of Crystal Growth, 223(3), 341, 2001 |
| 4 |
MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m Wilk A, Fraisse B, Christol P, Boissier G, Grech P, El Gazouli M, Rouillard Y, Baranov AN, Joullie A Journal of Crystal Growth, 227, 586, 2001 |